Screen LibraryGaAs microelectronics /
Saved in:
| Corporate Authors: | |
|---|---|
| Group Author: | ; |
| Published: |
Academic Press,
|
| Publisher Address: | Orlando, Fla. : |
| Publication Dates: | 1985. |
| Literature type: | eBook |
| Language: | English |
| Series: |
VLSI electronics ; v. 11 |
| Subjects: | |
| Online Access: |
http://www.sciencedirect.com/science/bookseries/07367031/11 |
| Carrier Form: | 1 online resource. |
| Bibliography: | Includes bibliographical references and index. |
| ISBN: |
9781483217772 1483217779 |
| Index Number: | TK7871 |
| CLC: | TN304.23 |
| Contents: |
Front Cover; GaAs Microelectronics; Copyright Page; Table of Contents; List of Contributors; Preface; Chapter 1. GaAs Technology Perspective; I. INTRODUCTION; II. HISTORY OF GaAs TECHNOLOGY DEVELOPMENT; III. PROPERTIES OF GaAs AND RELATED lll-V COMPOUNDS; IV. DEVICE STRUCTURES FOR INTEGRATED CIRCUITS; V. NEW MATERIALS AND DEVICES; VI. SUMMARY; ACKNOWLEDGMENTS; REFERENCES; Chapter 2. GaAs Material Preparation and Characterization; I. INTRODUCTION; II. GROWTH OF GaAs SINGLE CRYSTALS; III. DIRECT ION IMPLANTATION; IV. SUBSTRATE AND ACTIVE LAYER CHARACTERIZATION; REFERENCES. Chapter 3. GaAs Monolithic MicrowaveIntegrated CircuitsI. GaAs MMIC OVERVIEW; II. FUNDAMENTALS OF GaAs MICROWAVE DEVICETECHNOLOGY; III. GaAs MMIC DESIGN PRINCIPLES; IV. GaAs MMIC PROCESSING TECHNIQUES; V. EXAMPLES OF MMIC TECHNOLOGY; VI. APPLICATIONS OF GaAs MMICS; VII. ISSUES AND ASSESSMENT; REFERENCES; Chapter 4. The Future Impact of GaAs DigitalIntegrated Circuits; I. INTRODUCTION; II. HIGH-SPEED GaAs DEVICES AND CIRCUITS; III. LSI LIMITATIONS OF LOGIC GATES; IV. DESIGN-RULE EFFECTS ON SPEED PERFORMANCE; V. GaAs DIGITAL IC FABRICATION TECHNOLOGY. VI. HIGH-SPEED DIGITAL IC TECHNOLOGY COMPARISONACKNOWLEDGMENT; REFERENCES; Chapter 5. GaAs Bipolar Digital Integrated Circuits; I. GaAs BIPOLAR DEVELOPMENT: A HISTORICALPERSPECTIVE; II. GaAs/AIGaAs EPITAXIAL MATERIALS PREPARATION; III. GaAs HETEROJUNCTION BIPOLAR TRANSISTORS; IV. HETEROJUNCTION BIPOLAR GATE ARRAY TECHNOLOGY; V. CONCLUSIONS; ACKNOWLEDGMENTS; REFERENCES; Chapter 6. The Selectively Doped Heterostructure Transistor:Materials, Devices, and Circuits; I. INTRODUCTION; II. MATERIAL PROPERTIES OF SDHT STRUCTURES; III. DISCRETE DEVICES; IV. SDHT CIRCUIT IMPLEMENTATIONS; V. CONCLUSIONS V. ELECTRICAL PROBLEMS CREATED IN LCCCs AND PWB STRUCTURES BY INDUCTANCEIN THE POWER AND GROUND PLANESREFERENCES; Chapter 9. GaAs VLSI Technologyfor High-Speed Computers; I. INTRODUCTION; II. GaAs DEVICES FOR HIGH-PERFORMANCE VLSI; III. SELF-ALIGNED GaAs MESFET TECHNOLOGY FOR VLSI; IV. HEMT TECHNOLOGY FOR VLSI; V. APPLICATION TO HIGH-SPEED COMPUTERS; VI. SUMMARY; ACKNOWLEDGMENTS; REFERENCES; Chapter 10. Military Applicationsof GaAs Integrated Circuits; I. INTRODUCTION; II. FUNCTIONAL REPLICATION; III. MICROWAVE ANALOG APPLICATIONS; IV. MICROWAVE DIGITAL APPLICATIONS; VI. NOVEL APPLICATIONS. |