Screen Library3D IC devices, technologies, and manufacturing /
This book discusses the advantages of 3D devices and their applications in dynamic random access memory (DRAM), 3D-NAND flash, and advanced-technology-node CMOS ICs. Topics include the development of DRAM cell transistors and storage node capacitors; the manufacturing process of advanced buried-word...
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| Main Authors: | |
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| Published: |
SPIE Press,
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| Publisher Address: | Bellingham, Washington, USA : |
| Publication Dates: | [2016] |
| Literature type: | Book |
| Language: | English |
| Subjects: | |
| Summary: |
This book discusses the advantages of 3D devices and their applications in dynamic random access memory (DRAM), 3D-NAND flash, and advanced-technology-node CMOS ICs. Topics include the development of DRAM cell transistors and storage node capacitors; the manufacturing process of advanced buried-word-line DRAM; 3D FinFET CMOS IC devices; scaling trends of CMOS logic; devices that may be used in the "post-CMOS" era; and 3D technologies, such as the 3D-wafer process integration of silicon-on-ILD and TSV-based 3D packaging. |
| Carrier Form: | xi, 189 pages : illustrations (chiefly color), forms ; 26 cm |
| Bibliography: | Includes bibliographical references (pages 181-185) and index. |
| ISBN: |
9781510601468 (softcover) : 1510601465 (softcover) |
| Index Number: | TK7874 |
| CLC: | TN402 |
| Call Number: | TN402/X6 |
| Contents: | Preface -- Manufacturing processes of 3D IC devices -- Introduction -- 3D devices in the DRAM and BWL DRAM process -- Brief summary of DRAM -- Review questions -- 3D-NAND flash and its manufacturing process -- Introduction -- 3D-NAND flash memory manufacturing processes -- 3D-NAND summary and discussion -- Review questions -- High-k, metal-gate FinFET CMOS manufacturing process -- Introduction -- FinFET basics -- FinFET process -- Advanced FinFET CMOS process -- Advanced FinFET SRAM -- FinFET CMOS scaling -- Review questions -- Summary and future trends of the 3D IC process -- Scaling MOSFET |