Charge and spin transport in disordered graphene-based materials /
This thesis presents an in-depth theoretical analysis of charge and spin transport properties in complex forms of disordered graphene. It relies on innovative real space computational methods of the time-dependent spreading of electronic wave packets. First a universal scaling law of the elastic mea...
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Main Authors: | |
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Published: |
Springer,
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Publisher Address: | Cham : |
Publication Dates: | [2016] |
Literature type: | Thesis Book |
Language: | English |
Series: |
Springer theses : recognizing outstanding Ph. D. research,
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Subjects: | |
Summary: |
This thesis presents an in-depth theoretical analysis of charge and spin transport properties in complex forms of disordered graphene. It relies on innovative real space computational methods of the time-dependent spreading of electronic wave packets. First a universal scaling law of the elastic mean free path versus the average grain size is predicted for polycrystalline morphologies, and charge mobilities of up to 300.000 cm2/V.s are determined for 1 micron grain size, while amorphous graphene membranes are shown to behave as Anderson insulators. An unprecedented spin relaxation mechanism, unique to graphene and driven by spin/pseudospin entanglement is then reported in the presence of weak spin-orbit interaction (gold ad-atom impurities) together with the prediction of a crossover from a quantum spin Hall Effect to spin Hall effect (for thallium ad-atoms), depending on the degree of surface ad-atom segregation and the resulting island diameter. |
Carrier Form: | xvi, 153 pages : illustrations (some color), forms ; 24 cm. |
Bibliography: | Includes bibliographical references. |
ISBN: |
9783319255699 (print) : 331925569X (print) |
Index Number: | TA418 |
CLC: | TB383 |
Call Number: | TB383/V282 |
Contents: | Introduction -- Electronic and Transport Properties of Graphene -- The Real Space Order O(N) Transport Formalism -- Transport in Disordered Graphene -- Spin Transport in Disordered Graphene -- Conclusions. |