Screen LibraryGaN-based materials and devices : growth, fabrication, characterization and performance /
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| Corporate Authors: | |
|---|---|
| Group Author: | ; |
| Published: |
World Scientific,
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| Publisher Address: | Singapore ; River Edge, ,N.J. : |
| Publication Dates: | 2004. |
| Literature type: | eBook |
| Language: | English |
| Series: |
Selected topics in electronics and systems ;
v. 33 |
| Subjects: | |
| Online Access: |
http://www.worldscientific.com/worldscibooks/10.1142/5539#t=toc |
| Carrier Form: | 1 online resource (x,284pages) : illustrations. |
| Bibliography: | Includes bibliographical references. |
| ISBN: |
9812562362 (electronic bk.) 9789812562364 (electronic bk.) |
| CLC: | TN304.2 |
| Contents: |
Materials Properties of Nitrides. Summary/ Kinetics, Microstructure and Strain in GaN Thin Films Grown Via Pendeo-Epitaxy/ Strain of GaN Layers Grown Using 6s-SiC(OOO1) Substrates with Different Buffer Layers/ Growth of Thick GaN Films and Seeds for Bulk Crystal Growth/ Cracking of GaN Films/ Direct Bonding of GaN and Sic; A Novel Technique for Electronic Device Fabrication/ Electronic Properties of GaN(0001) - Dielectric Interfaces/ Quasi-Ballistic and Overshoot Transport in Group 111-Nitrides/ High Field Transport in AlN/ Generation-Recombination Noise in GaN-Based Devices/ Insulated Gate 111-N Heterostructure Field-Effect Transistors/ High Voltage AIGaN/GaN Heterojunction Transistors/ Etched Aperture GaN Cavet Through Photoelectrochemical Wet Etching/ n-AlGaAs/pGaAs/n-GaN Heterojunction Bipolar Transistor: The First Transistor Formed Via Wafer Fusion/ |