Optoelectronic devices : III-nitrides /

Tremendous progress has been made in the last few years in the growth, doping and processing technologies of the wide bandgap semiconductors. As a result, this class of materials now holds significant promis for semiconductor electronics in a broad range of applications. The principal driver for the...

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Bibliographic Details
Main Authors: Razeghi, M
Corporate Authors: Elsevier Science & Technology
Group Author: Henini, Mohamed
Published: Elsevier,
Publisher Address: Amsterdam ; San Diego ; Oxford :
Publication Dates: 2004.
Literature type: eBook
Language: English
Subjects:
Online Access: http://www.sciencedirect.com/science/book/9780080444260
Summary: Tremendous progress has been made in the last few years in the growth, doping and processing technologies of the wide bandgap semiconductors. As a result, this class of materials now holds significant promis for semiconductor electronics in a broad range of applications. The principal driver for the current revival of interest in III-V Nitrides is their potential use in high power, high temperature, high frequency and optical devices resistant to radiation damage. This book provides a wide number of optoelectronic applications of III-V nitrides and covers the entire process from growth to de
Carrier Form: 1 online resource (xv, 575 pages) : illustrations
Bibliography: Includes bibliographical references and index.
ISBN: 9780080538112
0080538118
Index Number: TA1750
CLC: TN2
Contents: The rise of III-nitrides : an introduction -- The evolution of nitride semiconductors -- Technology of MOVPE production tools -- MOCVD growth of Group III nitrides for high-power, high-frequency applications -- Growth of nitride quantum dots -- A1N epitaxial layers for UV photonics -- Properties of III-V Nitrides substrates and homoepitaxial layers -- III-nitride ultraviolet light emitting sources -- III-nitride UV photoconductors -- Quaternary InAlGaN-based UV LEDs -- design and fabrication of GaN high power rectifiers -- GaN negative differential resistance components with terahertz operat