Optoelectronic devices : III-nitrides /
Tremendous progress has been made in the last few years in the growth, doping and processing technologies of the wide bandgap semiconductors. As a result, this class of materials now holds significant promis for semiconductor electronics in a broad range of applications. The principal driver for the...
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Published: |
Elsevier,
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Publisher Address: | Amsterdam ; San Diego ; Oxford : |
Publication Dates: | 2004. |
Literature type: | eBook |
Language: | English |
Subjects: | |
Online Access: |
http://www.sciencedirect.com/science/book/9780080444260 |
Summary: |
Tremendous progress has been made in the last few years in the growth, doping and processing technologies of the wide bandgap semiconductors. As a result, this class of materials now holds significant promis for semiconductor electronics in a broad range of applications. The principal driver for the current revival of interest in III-V Nitrides is their potential use in high power, high temperature, high frequency and optical devices resistant to radiation damage. This book provides a wide number of optoelectronic applications of III-V nitrides and covers the entire process from growth to de |
Carrier Form: | 1 online resource (xv, 575 pages) : illustrations |
Bibliography: | Includes bibliographical references and index. |
ISBN: |
9780080538112 0080538118 |
Index Number: | TA1750 |
CLC: | TN2 |
Contents: | The rise of III-nitrides : an introduction -- The evolution of nitride semiconductors -- Technology of MOVPE production tools -- MOCVD growth of Group III nitrides for high-power, high-frequency applications -- Growth of nitride quantum dots -- A1N epitaxial layers for UV photonics -- Properties of III-V Nitrides substrates and homoepitaxial layers -- III-nitride ultraviolet light emitting sources -- III-nitride UV photoconductors -- Quaternary InAlGaN-based UV LEDs -- design and fabrication of GaN high power rectifiers -- GaN negative differential resistance components with terahertz operat |