Screen Library2010 wide bandgap cubic semiconductors：from growth to devices : proceedings of the E-MRS Symposium* F*, Strasbourg, France, 8-10 June 2010
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| Corporate Authors: | ; |
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| Group Author: | ; ; |
| Published: |
American Institute of Physics,
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| Publisher Address: | Melville, N.Y. |
| Publication Dates: | 2010. |
| Literature type: | Book |
| Language: | English |
| Series: |
AIP conference proceedings ; 1292 |
| Subjects: | |
| Carrier Form: | vii, 224 p.: ill. ; 28 cm. |
| ISBN: |
9780735408470 0735408475 |
| Index Number: | TN304 |
| CLC: | TN304.2-532 |
| Call Number: | TN304.2-532/W639/2010 |
| Contents: |
Includes bibliographical references and index. Cubic silicon carbide (3C-SiC): 3C-SiC epitaxial growth ; 3C-SiC characterizations and devices -- Diamond growth, characterizations and devices -- Cubic III-nitride growth, chracterizations and devices -- Other wide bandgap cubic semiconductors and heterostructures. |