Screen LibraryHeterostructures and quantum devices /
Heterostructure and quantum-mechanical devices promise significant improvement in the performance of electronic and optoelectronic integrated circuits (ICs). Though these devices are the subject of a vigorous research effort, the current literature is often either highly technical or narrowly focuse...
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| Corporate Authors: | |
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| Group Author: | ; |
| Published: |
Academic Press,
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| Publisher Address: | San Diego : |
| Publication Dates: | 1994. |
| Literature type: | eBook |
| Language: | English |
| Series: |
VLSI electronics ; v. 24. |
| Subjects: | |
| Online Access: |
http://www.sciencedirect.com/science/bookseries/07367031/24 |
| Summary: |
Heterostructure and quantum-mechanical devices promise significant improvement in the performance of electronic and optoelectronic integrated circuits (ICs). Though these devices are the subject of a vigorous research effort, the current literature is often either highly technical or narrowly focused. This book presents heterostructure and quantum devices to the nonspecialist, especially electrical engineers working with high-performance semiconductor devices. It focuses on a broad base of technical applications using semiconductor physics theory to develop the next generation of electrical engineering devices. The text covers existing technologies and future possibilities within a common framework of high-performance devices, which will have a more immediate impact on advanced semiconductor physics-particularly quantum effects-and will thus form the basis for longer-term technology development. |
| Carrier Form: | 1 online resource (xii, 452 pages) : illustrations. |
| Bibliography: | Includes bibliographical references and index. |
| ISBN: |
9781483295176 1483295176 9781322480312 1322480311 |
| Index Number: | TK7874 |
| CLC: | TN402 |
| Contents: |
Front Cover; Heterostructures and Quantum Devices; Copyright Page; Table of Contents; Contributors; Preface; Chapter 1. Heterostructure and Quantum Well Physics; I. Introduction; II. Electronic Structure of Semiconductors; III. Heterojunction Band Alignment; IV. Quantum Wells; V. Quasi-Equilibrium Properties of Heterostructures; VI. Transport Properties; VII. Summary; References; Chapter 2. Growth of Quantum Confined Structures by Molecular Beam Epitaxy; I. Introduction; II. Molecular Beam Epitaxy Instrumentation; III. Properties of Resonant Tunneling Diodes. IV. Multiple Quantum Well StructuresV. Resonant Tunneling Transistors; References; Chapter 3. Metalorganic Chemical Vapor Deposition for the Fabrication of Nanostructure Materials; I. Introduction to Metalorganic Chemical Vapor Deposition; II. Epitaxial Growth of Heterostructures and Quantum Wells by MOCVD; III. Growth of Heterostructures on Nonplanar Substrates; IV. Selective-Area Growth by MOCVD; V. Metalorganic Atomic Layer Epitaxy; VI. Summary and Future Prospects; References; Chapter 4. Heterojunction Bipolar Transistors in III-V Semiconductors; I. Introduction. II. Design Objectives for Bipolar TransistorsIII. Materials Engineering in HBTs; IV. Materials Considerations for III-V HBTs; V. HBT Fabrication Technology; VI. HBT Characteristics and Modeling; VII. Applications of HBTs; VIII. HBT Future Development; References; Chapter 5. Heterojunction Bipolar Transistors with Si1-xGex Alloys; I. Introduction; II. Materials for Si/Si1-xGex Heterojunction Bipolar Transistors; III. Band Offsets in the Si/Si1-xGex Materials System; IV. Fabrication and Optimization of Si/Si1-xGex HBTs; V. Summary; References; Chapter 6. Hot Electron Transistors. I. IntroductionII. The Semiclassical Approach; III. Concluding Remarks; References; Chapter 7. Quantum Well Heterostructure Lasers; I. Introduction; II. Quantum Well Heterostructure Laser Fundamentals; III. Quantum Well Heterostructure Materials; IV. Quantum Well Laser Structures; V. Summary; References; Chapter 8. Heterojunction Photodetectors for Optical Communications; I. Introduction; II. PIN Photodiodes; III. MSM Photodiodes; IV. Avalanche Photodiodes; V. Conclusion; References; Chapter 9. Quantum Transport; I. Introduction; II. Tunneling Theory; III. Near-Equilibrium Transport. IV. Far-from-Equilibrium TransportV. Summary; References; Chapter 10. High-Speed Resonant-Tunneling Diodes; I. Introduction; II. Physical Concepts in Resonant Tunneling; III. Resonant-Tunneling Materials; IV. DBRTD Device Physics; V. Time-Delay Mechanisms; VI. High-Speed Performance Characteristics; VII. High-Speed Experimental Results; VIII. Survey of High-Speed Applications; References; Chapter 11. Resonant-Tunneling Transistors; I. Introduction; II. Device Physics and Characteristics; III. RTD-Based Resonant-Tunneling Transistors; IV. Quantum Well Resonant-Tunneling Transistors. |