MOSFET modeling for VLSI simulation : theory and practice /

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Bibliographic Details
Main Authors: Arora, N. Narain, 1943
Corporate Authors: World Scientific Firm
Published: World Scientific,
Publisher Address: Singapore ; Hackensack, N.J. :
Publication Dates: 2007.
Literature type: eBook
Language: English
Series: International series on advances in solid state electronics and technology
Subjects:
Online Access: http://www.worldscientific.com/worldscibooks/10.1142/6157#t=toc
Item Description: At head of title: ASSET.
A reprint of MOSFET Modeling for VLSl Circuit Simulation: Theory and Practice, 596 pp, Springer-Verlag, NY 1993.
Carrier Form: 1 online resource (xxiii,545pages) : illustrations.
Bibliography: Includes bibliographical references and index.
ISBN: 9812707581 (electronic bk.)
9789812707581 (electronic bk.)
CLC: TN386
Contents: Overview -- Review of basic semiconductor and pn Junction Theory -- MOS transistor structure and operation -- MOS capacitor -- Threshold voltage -- MOSFET DC model -- Dynamic model -- Modeling hot-carrier effects -- Data acquisition and model parameter measurements -- Model parameter extraction using Optimization method -- SPICE Diode and MOSFET models and their parameters -- Statistical modeling and Worst-case design parameters.