MOSFET modeling for VLSI simulation : theory and practice /
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Main Authors: | |
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Corporate Authors: | |
Published: |
World Scientific,
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Publisher Address: | Singapore ; Hackensack, N.J. : |
Publication Dates: | 2007. |
Literature type: | eBook |
Language: | English |
Series: |
International series on advances in solid state electronics and technology
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Subjects: | |
Online Access: |
http://www.worldscientific.com/worldscibooks/10.1142/6157#t=toc |
Item Description: |
At head of title: ASSET. A reprint of MOSFET Modeling for VLSl Circuit Simulation: Theory and Practice, 596 pp, Springer-Verlag, NY 1993. |
Carrier Form: | 1 online resource (xxiii,545pages) : illustrations. |
Bibliography: | Includes bibliographical references and index. |
ISBN: |
9812707581 (electronic bk.) 9789812707581 (electronic bk.) |
CLC: | TN386 |
Contents: | Overview -- Review of basic semiconductor and pn Junction Theory -- MOS transistor structure and operation -- MOS capacitor -- Threshold voltage -- MOSFET DC model -- Dynamic model -- Modeling hot-carrier effects -- Data acquisition and model parameter measurements -- Model parameter extraction using Optimization method -- SPICE Diode and MOSFET models and their parameters -- Statistical modeling and Worst-case design parameters. |