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Defects in SiO and related dielectrics：science and technology

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Bibliographic Details
Corporate Authors: NATO Advanced Study Institute on Defects in SiO and Related Dielectrics: Science and Technology (2000 Erice, Italy) (Erice, Italy))
Group Author: Pacchioni G.; (Gianfranco), 1954-; Skuja L.; (Linards); Griscom David L.
Published: Kluwer Academic Publishers,
Publisher Address: Dordrecht, Netherlands, Boston, MA
Publication Dates: c2000.
Literature type: Book
Language: English
Series: NATO science series.. Series II,, Mathematics, physics, and chemistryMathematics, physics, and chemistry ; v. 2
Subjects:
Silica > Electric properties
Crystals > Defects.
Carrier Form: viii, 624 p.: ill. ; 24 cm.
ISBN: 0792366859 (acid-free paper)
Index Number: O77
CLC: O77-532
O612.4-532
Call Number: O612.4-532/D313/2000
Contents: Proceedings of the NATO Advanced Study Institute on Defects in SiO and Related
Includes bibliographical references and index.

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