Screen LibraryHigh-frequency GaN electronic devices /
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| Group Author: | ; ; |
|---|---|
| Published: |
Springer,
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| Publisher Address: | Cham : |
| Publication Dates: | [2020] |
| Literature type: | Book |
| Language: | English |
| Subjects: | |
| Carrier Form: | viii, 309 pages : illustrations (some color) ; 24 cm |
| Bibliography: | Includes bibliographical references and index. |
| ISBN: | 9783030202071 |
| Index Number: | QC611 |
| CLC: | O472 |
| Call Number: | O472/H638 |
| Contents: | Chapter 1. Introduction -- Chapter 2.High Power High Frequency Transistors: A Materials Perspective -- Chapter 3. Isotope Engineering of GaN for Boosting Transistor Speeds -- Chapter 4. Linearity Aspects of High Power Amplification in GaN Transistors -- Chapter 5. III-Nitride Tunneling Hot Electron Transfer Amplifier (THETA) -- Chapter 6.Plasma-Wave Propagation in GaN and Its Applications -- Chapter 7.Numerical Simulation of Distributed Electromagnetic and Plasma-wave Effect Devices -- Chapter 8.Resonant Tunneling Transport in Polar III-Nitride Heterostructures -- Chapter 9.Fabrication and Characterization of GaN/AlN Resonant Tunneling Diodes -- Chapter 10.Non-Contact Metrology for mm-wave and THz Electronics. |