Screen LibrarySilicon solid state devices and radiation detection /
This book addresses the fundamental principles of interaction between radiation and matter, the principles of working and the operation of particle detectors based on silicon solid state devices. It covers a broad scope in the fields of application of radiation detectors based on silicon solid state...
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| Main Authors: | |
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| Corporate Authors: | |
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| Published: |
World Scientific Pub. Co.,
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| Publisher Address: | Singapore ; Hackensack, N.J. : |
| Publication Dates: | 2012. |
| Literature type: | eBook |
| Language: | English |
| Subjects: | |
| Online Access: |
http://www.worldscientific.com/worldscibooks/10.1142/8383#t=toc |
| Summary: |
This book addresses the fundamental principles of interaction between radiation and matter, the principles of working and the operation of particle detectors based on silicon solid state devices. It covers a broad scope in the fields of application of radiation detectors based on silicon solid state devices from low to high energy physics experiments, including in outer space and in the medical environment. This book also covers state-of-the-art detection techniques in the use of radiation detectors based on silicon solid state devices and their readout electronics, including the latest developments on pixelated silicon radiation detector and their application. The content and coverage of the book benefit from the extensive experience of the two authors who have made significant contributions as researchers as well as in teaching physics students in various universities. |
| Carrier Form: | 1 online resource (xii,418pages) : illustrations (some color) |
| Bibliography: | Includes bibliographical reference (pages 373-400) and index. |
| ISBN: | 9789814390057 (electronic bk.) |
| CLC: | TL814 |
| Contents: | 1. Interactions of charged particles and photons. 1.1. Passage of massive charged particles through matter. 1.2. Collision and radiation energy-losses of electrons and positrons. 1.3. Nuclear and non-ionizing energy losses of electrons. 1.4. Interactions of photons with matter -- 2. Physics and properties of silicon semiconductor. 2.1. Structure and growth of silicon crystals. 2.2. Energy band structure and energy gap. 2.3. Carrier concentration and fermi level -- 3. Transport phenomena in semiconductors. 3.1. Thermal and drift motion in semiconductors. 3.2. Diffusion mechanism. 3.3. Thermal equilibrium and excess carriers in semiconductors. 3.4. The continuity equations. 3.5. Hall effect in silicon semiconductors -- 4. Properties of the p-n junctions of silicon radiation devices. 4.1. Standard planar float-zone and MESA silicon detectors technologies. 4.2. Basic principles of junction operation. 4.3. Charge collection efficiency and Hecht equation. 4.4. Junction characteristics down to cryogenic temperature -- 5. Charged particle detectors. 5.1 Spectroscopic characteristics of standard planar detectors. 5.2. Microstrip detectors. 5.3. Pixel detector device -- 6. Photon detectors and dosimetric devices. 6.1. Photodiodes, avalanche photodiodes and silicon photomultipliers. 6.2. Photovoltaic and solar cells. 6.3. Neutron detection with silicon detectors -- 7. Examples of applications of silicon devices in physics and medical physics. 7.1. Silicon calorimetry. 7.2. Silicon vertex and tracker detectors. 7.3 Applications in space and balloon experiments. 7.4. Application of silicon devices in medical physics. |