Screen LibraryHot carriers in semiconductor nanostructures : physics and applications /
Nonequilibrium--hot--charge carriers play a crucial role in the physics and technology of semiconductor nanostructure devices. This book--one of the first on the topic--discusses fundamental aspects of hot carriers in quasi-two-dimensional systems and the impact of these carriers on semiconductor de...
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| Corporate Authors: | |
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| Group Author: | |
| Published: |
Academic Press,
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| Publisher Address: | Boston : |
| Publication Dates: | 1992. |
| Literature type: | eBook |
| Language: | English |
| Subjects: | |
| Online Access: |
http://www.sciencedirect.com/science/book/9780126381405 |
| Summary: |
Nonequilibrium--hot--charge carriers play a crucial role in the physics and technology of semiconductor nanostructure devices. This book--one of the first on the topic--discusses fundamental aspects of hot carriers in quasi-two-dimensional systems and the impact of these carriers on semiconductor devices. The work will provide scientists and device engineers with an authoritative review of the most exciting recent developments in this rapidly moving field. It should be read by all those who wish to learn the fundamentals of contemporary ultra-small, ultra-fast semiconductor devices. Key Features * Topics covered include * Reduced dimensionality and quantum wells * Carrier-phonon interactions and hot phonons * Femtosecond optical studies of hot carriers * Ballistic transport * Submicron and resonant tunneling devices. |
| Item Description: | "Published by arrangement with AT & T." |
| Carrier Form: | 1 online resource (xvi, 508 pages) : illustrations |
| Bibliography: | Includes bibliographical references and index. |
| ISBN: |
9780080925707 0080925707 |
| Index Number: | QC611 |
| CLC: | O472-532 |
| Contents: |
Front Cover; Hot Carriers In Semiconductor Nanostructures: Physics and Applications; Copyright Page; Table of Contents; Preface; Contributors; Part I: Overview; Chapter I.1. Overview; 1. Introduction; 2. Fundamental Aspects of Quasi-2D Systems; 3. Monte Carlo Simulations; 4. Optical Studies of Hot Carriers in Semiconductor Nanostructures; 5. Transport Studies and Devices; 6. Summary; References; Part II: Fundamental Theory; Chapter II.l. Electron-Phonon Interactions in 2D Systems; 1. Introduction; 2. Quantum Confinement.; 3. The Electron-Phonon Scattering Rate. 4. Model Rates for the Fro hlich Interaction5. Scattering by Acoustic Phonons; 6. Concluding Remarks; References; Chapter II. 2. Quantum Many-Body Aspects of Hot-Carrier Relaxation in Semiconductor Microstructures; 1. Introduction; 2. Energy Relaxation of an Excited Electron Gas; 3. Single-Particle Inelastic Lifetime; 4. Conclusion; Acknowledgments; References; Chapter II. 3. Cooling of Highly Photoexcited Electron-Hole Plasma in Polar Semiconductors and Semiconductor Quantum Wells:A Balance-Equation Approach; 1. Carrier Cooling in Bulk Polar Semiconductors. 2. Carrier Cooling in Quantum-Well Structures3. Summary and Conclusions; References; Chapter II. 4. Tunneling Times in Semiconductor Heterostructures: A Critical Review; 1. Introduction; 2. Phase Time, Dwell Time, Bu ttiker-Landauer Time, Larmor Times, and Complex Times; 3. Analysis and Domain of Validity of the Proposed Tunneling Times; 4. Experimental Methods for Determining Tunneling Times; Acknowledgments; References; Chapter II. 5. Quantum Transport; 1. Introduction; 2. The General Problem and the Various Approaches; 3. Applications; 4. Conclusions; References. Part III: Monte Carlo SimulationsChapter III.l. Hot-Carrier Relaxation in Quasi-2D Systems; 1. Introduction; 2. Scattering in Quasi-2D Systems; 3. Monte Carlo Simulation; 4. Analysis of Experimental Results; 5. Summary and Conclusions; Acknowledgments; References; Chapter III. 2. Monte Carlo Simulation of GaAs-AlxGa1_xAs Field-Effect Transistors; 1. Introduction; 2. Ensemble Monte Carlo Device Model; 3. Nonstationary Transport and Scaling of modfets; 4. Physics of Real-Space Transfer Transistors; 5. Extended Drift-Diffusion Formalism; 6. Conclusions; Acknowledgments; References. Part IV: Optical StudiesChapter IV.l. Ultrafast Luminescence Studies of Carrier Relaxation and Tunneling in Semiconductor Nanostructures; 1. Introduction; 2. Ultrafast Luminescence Studies of Carrier Relaxation; 3. Ultrafast Luminescence Studies of Tunneling in Semiconductor Nanostructures; 4. Summary; Acknowledgments; References; Chapter IV. 2. Optical Studies of Femtosecond Carrier Thermalization in GaAs; 1. Introduction; 2. Experimental Methods; 3. Experimental Results; 4. Theoretical Approaches; 5. Conclusion; Acknowledgments; References. |