Screen LibraryIII-nitride : semiconductor materials /
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| Corporate Authors: | |
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| Group Author: | |
| Published: |
Imperial College Press ; Distributed by World Scientific Pub.,
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| Publisher Address: | London : Singapore : |
| Publication Dates: | 2006. |
| Literature type: | eBook |
| Language: | English |
| Subjects: | |
| Online Access: |
http://www.worldscientific.com/worldscibooks/10.1142/P437#t=toc |
| Carrier Form: | 1 online resource (xii,428pages) : illustrations |
| Bibliography: | Includes bibliographical references. |
| ISBN: |
1860949037 (electronic bk.) 9781860949036 (electronic bk.) |
| CLC: | TN304.2 |
| Contents: | ch. 1. Hydride vapor phase epitaxy of group III nitride materials / V. Dmitriev, A. Usikov -- ch. 2. Planar MOVPE technology for epitaxy of Ill-nitride materials / M. Dauelsberg, B. Schineller, J. Kaeppeler -- ch. 3. Close-coupled showerhead MOCVD technology for the epitaxy of GaN and related materials / E. J. Thrush, A. R. Boyd -- ch. 4. Molecular beam epitaxy for III-N materials / H. Tang, J. Webb -- ch. 5. Growth and properties of nonpolar GaN films and heterostructures / Y. J. Sun, O. Brandt -- ch. 6. Indium-nitride growth by high-pressure CVD: real-time and ex-situ characterization / N. Dietz -- ch. 7. A new look on InN / L.-W. Tu, C.-L. Hsiao, M.-H. Tsai -- ch. 8. Growth and optical/electrical properties of AlxGap[symbol]N alloys in the full composition range / F. Yun -- ch. 9. Optical investigation of InGaN/GaN quantum well structures grown by MOCVD / Tao Wang -- ch. 10. Clustering nanostructures and optical characteristics in InGaN/GaN quantum-well structures with silicon doping / Y.-C. Cheng, C.-Y. Chen, C. C. Yang -- ch. 11. Ill-nitrides micro- and nano-structures / H. M. Ng, A. Chowdhury -- ch. 12. New developments in dilute nitride semiconductor research / W. Shan ... [et al.]. |