Screen LibrarySilicon carbide power devices /
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| Main Authors: | |
|---|---|
| Corporate Authors: | |
| Published: |
World Scientific,
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| Publisher Address: | Singapore ; Hackensack, N.J. : |
| Publication Dates: | 2005. |
| Literature type: | eBook |
| Language: | English |
| Subjects: | |
| Online Access: |
http://www.worldscientific.com/worldscibooks/10.1142/5986#t=toc |
| Carrier Form: | 1 online resource (xxi,503pages) : illustrations (some color) |
| Bibliography: | Includes bibliographical references and index. |
| ISBN: |
9812774521 (electronic bk.) 9789812774521 (electronic bk.) |
| CLC: | TN304.1-532 |
| Contents: | ch. 1. Introduction -- ch. 2. Material properties and technology -- ch. 3. Breakdown voltage -- ch. 4. PiN rectifiers -- ch. 5. Schottky rectifiers -- ch. 6. Shielded Schottky rectifiers -- ch. 7. Metal-semiconductor field effect transistors -- ch. 8. The Baliga-pair configuration -- ch. 9. Planar power MOSFETs -- ch. 10. Shielded planar MOSFETs -- ch. 11. Trench-gate power MOSFETs -- ch. 12. Shielded trench-gate power MOSFETs -- ch. 13. Charge coupled structures -- ch. 14. Integral diodes -- ch. 15. Lateral high voltage FETs -- ch. 16. Synopsis. |