Screen LibraryGallium nitride power devices /
"GaN is considered the most promising material candidate in next-generation power device applications, owing to its unique material properties, for example, bandgap, high breakdown field, and high electron mobility. Therefore, GaN power device technologies are listed as the top priority to be d...
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| Group Author: | ; |
|---|---|
| Published: |
Pan Stanford Publishing,
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| Publisher Address: | Singapore : |
| Publication Dates: | [2017] |
| Literature type: | Book |
| Language: | English |
| Subjects: | |
| Summary: |
"GaN is considered the most promising material candidate in next-generation power device applications, owing to its unique material properties, for example, bandgap, high breakdown field, and high electron mobility. Therefore, GaN power device technologies are listed as the top priority to be developed in many countries, including the United States, the European Union, Japan, and China.This book presents a comprehensive overview of GaN power device technologies, for example, material growth, property analysis, device structure design, fabrication process, reliability, failure analysis, and p |
| Carrier Form: | viii, 297 pages : illustrations (some color) ; 24 cm |
| Bibliography: | Includes bibliographical references and index. |
| ISBN: |
9789814774093 981477409X |
| Index Number: | TK7881 |
| CLC: | TM1 |
| Call Number: | TM1/G171 |
| Contents: |
The growth technology of high-voltage GaN on silicon / The characteristics of polarization effects in GaN heterostructures / GaN transistor fabrication process / Conventional AlGaN/GaN heterojunction field-effect transistors / Original demonstration of depletion-mode and enhancement-mode AlGaN/GaN heterojunction field-effect transistors / Surface passivation and GaN MIS-HEMTs/ Tianli Duan, Liu Zhihong -- GaN vertical power devices / Reliability of GaN H |