Screen LibraryFundamentals of nanotransistors /
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| Main Authors: | |
|---|---|
| Published: |
World Scientific,
|
| Publisher Address: | Singapore : |
| Publication Dates: | [2018] |
| Literature type: | Book |
| Language: | English |
| Series: |
Lessons from nanoscience: a lecture notes series,
volume 6 |
| Subjects: | |
| Carrier Form: | xlv, 342 pages : illustrations ; 23 cm. |
| Bibliography: | Includes bibliographical references and index. |
| ISBN: |
9789814571739 (paperback) : 9814571733 (paperback) 9789814571722 (hardback) 9814571725 (hardback) |
| Index Number: | TK7871 |
| CLC: |
TN432 TN386.1 |
| Call Number: | TN386.1/L962 |
| Contents: | Overview -- The transistor as a black box -- The MOSFET: a barrier-controlled device -- MOSFET IV: traditional approach -- MOSFET IV: the virtual source model -- Poisson equation and the depletion approximation -- Gate voltage and surface potential -- Mobile charge: bulk MOS -- Mobile charge: extremely thin SOI -- 2D MOS electrostatics -- The VS model revisited -- The Landauer approach to transport -- The ballistic MOSFET -- The ballistic injection velocity -- Connecting the ballistic and VS models -- Carrier scattering and transmission -- Transmission theory of the MOSFET -- Connecting the transmission and VS models -- VS characterization of transport in nanotransistors -- Limits and limitations. |