Applied atomic collision physics. Volume 4, Condensed matter /
Saved in:
Corporate Authors: | |
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Group Author: | |
Published: |
Academic Press,
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Publisher Address: | Orlando, Florida ; London : |
Publication Dates: |
1983. ©1983 |
Literature type: | eBook |
Language: | English |
Subjects: | |
Online Access: |
http://www.sciencedirect.com/science/book/9780124788046 |
Carrier Form: | 1 online resource (647 pages) |
Bibliography: | Includes bibliographical references at the end of each chapters and index. |
ISBN: |
9781483218694 1483218694 |
Index Number: | QC794 |
CLC: | O562.5 |
Contents: |
Front Cover; Condensed Matter; Copyright Page; Table of Contents; Treatise Preface; Preface; Chapter 1. Heavy Ion Charge States; I. Introduction; II. Basic Processes and Mathematical Description of Charge Exchange; III. Experimental Aspects; IV. Electron Capture; V. Electron Loss; VI. Equilibrium Charge-State Distributions; VII. Gas and Solid Effects; References; Chapter 2. Ionization Phenomena and Sources of Ions; I. Introduction; II. Ion Source Selection Considerations; III. Vapor Transport Methods; IV. Positive Ionization Phenomena and Sources; V. Negative Ionization Phenomena and Sources VI. Ion Extraction and Optics of the Extraction Region ReferencesReferences; Chapter 3. Radiation Physics as a Basis of Radiation Chemistry and Biology; I. What are the Problems of Radiation Physics?; II. Problems of Class I: How Do Radiations Degrade in Matter?; III. Problems of Class II: How Does Matter Change after Receiving Energy from Radiation?; IV. Some Notions of Radiation Chemistry and Biology; V. Concluding Remarks; References; Chapter 4. Low Energy Ion Scattering and Atomic Diffraction; I. Ion Scattering Spectrometry (ISS); II. Scattering of Atomic Beams at Thermal Energies III. Sputtered Ion Emission: Phenomena and ModelsIV. Instrumentation; V. Applications of Secondary Ion Mass Spectrometry; VI. Conclusion; References; Chapter 8. The Time-of-Flight Atom Probe and Field Ion Microscopy; I. Introduction; II. Basic Principles; III. Field Ion Microscope and Atom-Probe FIM; IV. Atomic Processes on Solid Surfaces; V. Atom-Probe Analyses; VI. Summary; References; Chapter 9. Ion-Induced X-Ray Emission; I. Introduction; II. Coulomb lonization; III. Proton-Induced X-Ray Emission (PIXE); IV. Heavy-Ion-Induced X-Ray Emission; References Chapter 10. X-Ray Fluorescence AnalysisI. Introduction; II. Development of the Physics; III. Development of the Analytical Application; IV. Comparison to Other Analytical Techniques; V. X-Ray Fluorescence Analysis in Industry; VI. Conclusions; References; Chapter 11. Photoelectron and AugerSpectroscopy; I. Introduction; 1. Introduction; II. Description of the Processes; II. Depth Distributions in Implanted and Annealed Samples; III. Experimental Considerations; IV. Applications; Acknowledgments; References; Chapter 12. Ion Implantation in Semiconductors; III. Implantation Damage |