Applied atomic collision physics. Volume 4, Condensed matter /

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Bibliographic Details
Corporate Authors: Elsevier Science & Technology
Group Author: Datz, Sheldon
Published: Academic Press,
Publisher Address: Orlando, Florida ; London :
Publication Dates: 1983.
©1983
Literature type: eBook
Language: English
Subjects:
Online Access: http://www.sciencedirect.com/science/book/9780124788046
Carrier Form: 1 online resource (647 pages)
Bibliography: Includes bibliographical references at the end of each chapters and index.
ISBN: 9781483218694
1483218694
Index Number: QC794
CLC: O562.5
Contents: Front Cover; Condensed Matter; Copyright Page; Table of Contents; Treatise Preface; Preface; Chapter 1. Heavy Ion Charge States; I. Introduction; II. Basic Processes and Mathematical Description of Charge Exchange; III. Experimental Aspects; IV. Electron Capture; V. Electron Loss; VI. Equilibrium Charge-State Distributions; VII. Gas and Solid Effects; References; Chapter 2. Ionization Phenomena and Sources of Ions; I. Introduction; II. Ion Source Selection Considerations; III. Vapor Transport Methods; IV. Positive Ionization Phenomena and Sources; V. Negative Ionization Phenomena and Sources
VI. Ion Extraction and Optics of the Extraction Region ReferencesReferences; Chapter 3. Radiation Physics as a Basis of Radiation Chemistry and Biology; I. What are the Problems of Radiation Physics?; II. Problems of Class I: How Do Radiations Degrade in Matter?; III. Problems of Class II: How Does Matter Change after Receiving Energy from Radiation?; IV. Some Notions of Radiation Chemistry and Biology; V. Concluding Remarks; References; Chapter 4. Low Energy Ion Scattering and Atomic Diffraction; I. Ion Scattering Spectrometry (ISS); II. Scattering of Atomic Beams at Thermal Energies
III. Sputtered Ion Emission: Phenomena and ModelsIV. Instrumentation; V. Applications of Secondary Ion Mass Spectrometry; VI. Conclusion; References; Chapter 8. The Time-of-Flight Atom Probe and Field Ion Microscopy; I. Introduction; II. Basic Principles; III. Field Ion Microscope and Atom-Probe FIM; IV. Atomic Processes on Solid Surfaces; V. Atom-Probe Analyses; VI. Summary; References; Chapter 9. Ion-Induced X-Ray Emission; I. Introduction; II. Coulomb lonization; III. Proton-Induced X-Ray Emission (PIXE); IV. Heavy-Ion-Induced X-Ray Emission; References
Chapter 10. X-Ray Fluorescence AnalysisI. Introduction; II. Development of the Physics; III. Development of the Analytical Application; IV. Comparison to Other Analytical Techniques; V. X-Ray Fluorescence Analysis in Industry; VI. Conclusions; References; Chapter 11. Photoelectron and AugerSpectroscopy; I. Introduction; 1. Introduction; II. Description of the Processes; II. Depth Distributions in Implanted and Annealed Samples; III. Experimental Considerations; IV. Applications; Acknowledgments; References; Chapter 12. Ion Implantation in Semiconductors; III. Implantation Damage