Screen LibrarySurface and interface effects in VLSI /
Surface and Interface Effects in VLSI.
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| Corporate Authors: | |
|---|---|
| Group Author: | ; |
| Published: |
Academic Press,
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| Publisher Address: | Orlando : |
| Publication Dates: | 1985. |
| Literature type: | eBook |
| Language: | English |
| Series: |
VLSI electronics ; v. 10 |
| Subjects: | |
| Online Access: |
http://www.sciencedirect.com/science/bookseries/07367031/10 |
| Summary: |
Surface and Interface Effects in VLSI. |
| Carrier Form: | 1 online resource (xii, 383 pages) : illustrations. |
| Bibliography: | Includes bibliographical references and index. |
| ISBN: |
9781483217765 1483217760 |
| Index Number: | TK7874 |
| CLC: | TN47 |
| Contents: |
Front Cover; Surface and Interface Effects in VLSI; Copyright Page; Table of Contents; List of Contributors; Preface; Part A: Introduction; Chapter 1. Interfaces and Devices; I. INTRODUCTION; II. ELECTRICAL PROPERTIES OF INTERFACES; III. STRUCTURE OF INTERFACES; IV. REPRODUCIBILITY AND STABILITY; V. SUMMARY AND PROGNOSIS; ACKNOWLEDGMENT; REFERENCES; Part B: Structure; Chapter 2. Characterization ofthe Si -- SiO2 Interface; I. INTRODUCTION; II. HISTORICAL BACKGROUND; III. OXIDATION AND DIFFUSION; IV. INTERFACE MORPHOLOGY; V. INTERFACE TRAPS; VI. THEORETICAL MODELS; VII. CONCLUSIONS. ACKNOWLEDGMENTSREFERENCES; Chapter 3. Fundamental Studies of Interfaces: The Unified Defect Model and Its Application to GaAs Integrated Circuits; I. INTRODUCTION; II. NEW EXPERIMENTAL TECHNIQUES TO STUDY SURFACES AND INTERFACES ON AN ATOMIC SCALE: SYNCHROTRON RADIATION; III. STRATEGY USED IN THIS WORK; IV. THE UNIFIED DEFECT MODEL FOR III-V INTERFACES AND ITS ORIGIN; V. Ill-V TERNARY AND QUATERNARY ALLOYS; VII. OHMIC CONTACTS; VIII. CHEMISTRY AND INTERMIXING AT III -- V SEMICONDUCTOR-METAL INTERFACES; IX. OTHER APPLICATIONS TO VLSI DEVICES; X. SUMMARY AND CONCLUSIONS; ACKNOWLEDGMENTS. VI. THE GaAs SCHOTTKY BARRIERVII. CHANNEL-SUBSTRATE INTERFACE; VIII. OHMIC CONTACTS; IX. DIELECTRIC III-V COMPOUND SEMICONDUCTOR INTERFACES; X. SURFACE AND INTERFACIAL PROPERTIES OF TERNARY AND QUATERNARY III-V ALLOYS; XI. INSTABILITIES IN MISFET; XII. AFTERTHOUGHTS; REFERENCES; Chapter 6. The Role of Boundary Conditions in Near- and Submicrometer-Length Gallium Arsenide Structures; I. INTRODUCTION; II. TRANSPORT THROUGH MOMENT OF THE BOLTZMANN TRANSPORT EQUATION; III. SOLUTION OF THE GOVERNING EQUATIONS; IV. Conclusions; ACKNOWLEDGMENTS; REFERENCES. APPENDIX. DIMENSIONLESS EQUATIONS USED IN THE NUMERICAL SIMULATIONSChapter 7. Carrier Transport at the Si -- SiO2 Interface; List of Symbols; I. INTRODUCTION; II. SCALING; III. CARRIER VELOCITY MEASUREMENTS; IV. A MODEL FOR ELECTRON VELOCITY IN SILICON; V. CHARGE PACKET TRANSPORT AND BROADENING; REFERENCES; Index; Contents of Other Volumes. |