Screen LibraryPreparation and properties of thin films /
Treatise on Materials Science and Technology, Volume 24: Preparation and Properties of Thin Films covers the progress made in the preparation of thin films and the corresponding study of their properties. The book discusses the preparation and property correlations in thin film; the variation of mic...
Saved in:
| Corporate Authors: | |
|---|---|
| Group Author: | ; |
| Published: |
Academic Press,
|
| Publisher Address: | New York : |
| Publication Dates: | 1982. |
| Literature type: | eBook |
| Language: | English |
| Series: |
Treatise on materials science and technology ;
v. 24 |
| Subjects: | |
| Online Access: |
http://www.sciencedirect.com/science/bookseries/01619160/24 |
| Summary: |
Treatise on Materials Science and Technology, Volume 24: Preparation and Properties of Thin Films covers the progress made in the preparation of thin films and the corresponding study of their properties. The book discusses the preparation and property correlations in thin film; the variation of microstructure of thin films; and the molecular beam epitaxy of superlattices in thin film. The text also describes the epitaxial growth of silicon structures (thermal-, laser-, and electron-beam-induced); the characterization of grain boundaries in bicrystalline thin films; and the mechanical properti. |
| Carrier Form: | 1 online resource (xi, 337 pages) : illustrations. |
| Bibliography: | Includes bibliographical references and index. |
| ISBN: |
9781483218298 1483218295 |
| Index Number: | TA403 |
| CLC: | TB3 |
| Contents: |
Front Cover; Preparation and Properties of Thin Films; Copyright Page; Table of Contents; CONTRIBUTORS; PREFACE; PART I: INTRODUCTION; Chapter 1. Preparation and Property Correlations in Thin Films; PART II: VARIATION OF MICROSTRUCTURE OF THIN FILMS; Chapter 2. Molecular Beam Epitaxy of Superlattices in Thin Films; I. Introduction; II. Molecular Beam Epitaxy; III. Structure of Semiconductor Superlattices; IV. Properties of Superlattice Structures; V. Concluding Remarks; References; Chapter 3. Epitaxial Growth of Silicon Structures-Thermal, Laser-, and Electron-Beam-Induced; I. Introduction. II. Thermal and Laser-Induced Epitaxy: Implanted- Amorphous SiliconIII. Deposited Layers of Silicon on Silicon; IV. Epitaxial Silicides; V. Crystallization of Deposited Films; VI. Summary; References; Chapter 4. Characterization of Grain Boundaries in Bicrystalline Thin Films; I. Introduction; II. Structure of Grain Boundaries; III. Properties of Grain Boundaries; IV. Preparation of Bicrystalline Thin Films; V. Characterization of Grain Boundary Structure; VI. Recent Experimental Results; VII. Summary; VIII. Perspective; References; Chapter 5. Mechanical Properties of Thin Films on Substrates. I. IntroductionII. Biaxial Strain Model; III. Strain Relaxation Mechanisms; IV. Strain Relaxation by Dislocation Glide; V. Strain Relaxation by Diffusional Creep; VI. Strain at Grain Boundaries; VII. Strain and Stress at Film Edges; VIII. Microstructures Which Affect Mechanical Properties of Thin Films; IX. Application; References; PART III: VARIATION OF COMPOSITION OF THIN FILMS; Chapter 6. Ion Beam Modification of Thin Films; I. Introduction; II. Range and Energy Deposition; III. Sputtering-Induced Compositional Changes; IV. Implanted Metastable Phases. V lon-Beam-Induced Reactions of Metal FilmsReferences; Chapter 7. Thin Alloy Films for Metallization in Microelectronic Devices; I. Introduction; II. Metallurgical Degradation in Microelectronic Devices; III. Near-Equilibrium Multilayered Thin-Film Structure; IV. Applications of Thin Alloy Films in Forming Shallow Silicide Contacts; V. Conclusion; References; PART IV: VARIATION OF PATTERN OF THIN FILMS; Chapter 8. Fabrication and Physical Properties of Ultrasmall Structures; I. Introduction; II. Fabrication; III. Physical Properties; IV. Summary; References; INDEX. |