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1
Logic non-volatile memory : the NVM solutions from eMemory /

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Main Authors: Hsu, Charles Ching-Hsiang
Corporate Authors: eMemory Technology, Inc
Group Author: Lin, Yuan-Tai; Yang, Evans Ching-Sung; Shen, Rick Shih-Jye
Published: New Jersey : World Scientific,
Publication Dates: [2014]
Call Number: TP333/H873
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2
Electromigration in ULSI Interconnections

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Main Authors: Tan Cher Ming 1959-
Published: World Scientific,
Publication Dates: c2010.
Call Number: TN47/T161
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3
Compact hierarchical bipolar transistor modeling with hicum

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Main Authors: Schröter Michael (Michael Schroter, Anjan Chakravorty.)
Group Author: Chakravorty Anjan (Author)
Published: World Scientific,
Publication Dates: c2010.
Call Number: TN322/S382
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4
Invention of integrated circuits untold important facts

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Main Authors: Saxena Arjun N
Published: World Scientific Pub. Co. Inc.,
Publication Dates: c2009.
Call Number: TN47/S272-1
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5
The physics and modeling of MOSFETS surface-potential model HiSIM

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Main Authors: Miura-Mattausch Mitiko 1949-
Group Author: Mattausch Hans Jürgen; Ezaki Tatsuya
Published: World Scientific,
Publication Dates: c2008.
Call Number: TN32-32/M685
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6
MOSFET modeling for circuit analysis and design /

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Main Authors: Galup-Montoro, Carlos
Corporate Authors: World Scientific Firm
Group Author: Schneider, Marcio Cherem
Published: World Scientific,
Publication Dates: 2007
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7
MOSFET modeling for VLSI simulation : theory and practice /

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Main Authors: Arora, N. Narain, 1943
Corporate Authors: World Scientific Firm
Published: World Scientific,
Publication Dates: 2007.
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8
Mosfet modeling for VLSI simulation theory and practice

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Main Authors: Arora N (Narain), 1943-
Published: World Scientific,
Publication Dates: c2007.
Call Number: TN386/A769
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9
MOSFET modeling for circuit analysis and design

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Main Authors: Galup-Montoro Carlos
Group Author: Schneider Márcio Cherem
Published: World Scientific,
Publication Dates: c2007.
Call Number: TN386.1/G181
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10
Ionizing radiation effects in MOS oxides

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Main Authors: Oldham Timothy R 1947-
Published: World Scientific,
Publication Dates: c1999.
Call Number: TN432/O448
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11
Topics in growth and device processing of III-V semiconductors

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Main Authors: Pearton S. J
Group Author: Abernathy C. R; Ren F
Published: World scientific,
Publication Dates: c1996.
Call Number: TN304.205/P362/
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12
The physics and modeling of MOSFETS : surface-potential model HiSIM /

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Main Authors: Miura-Mattausch, Mitiko, 1949- (Author)
Corporate Authors: World Scientific (Firm)
Group Author: Mattausch, Hans Jurgen; Ezaki, Tatsuya
Published: World Scientific Pub. Co.,
Publication Dates: 2008.
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13
Invention of integrated circuits : untold important facts /

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Main Authors: Saxena, Arjun N. (Author)
Corporate Authors: World Scientific (Firm)
Published: World Scientific Pub. Co.,
Publication Dates: 2009.
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14
BSIM4 and MOSFET modeling for IC simulation /

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Main Authors: Liu, Weidong, 1965- (Author)
Corporate Authors: World Scientific (Firm)
Group Author: Hu, Chenming.
Published: World Scientific Pub. Co.,
Publication Dates: 2011.
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15
Ionizing radiation effects in MOS oxides /

Cover is for reference only
Main Authors: Oldham, Timothy R., 1947- (Author)
Corporate Authors: World Scientific (Firm)
Published: World Scientific Pub. Co.,
Publication Dates: 1999.
eBook
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16
Logic non-volatile memory : the NVM solutions from eMemory /

Cover is for reference only
Corporate Authors: World Scientific (Firm); eMemory Technology, Inc.
Group Author: Hsu, Charles Ching-Hsiang (Editor)
Published: World Scientific Pub. Co.,
Publication Dates: 2014.
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