Screen LibraryIII-nitride electronic devices /
"III-Nitride Electronic Devices, Volume 102, emphasizes two major technical areas advanced by this technology: radio frequency (RF) and power electronics applications. The range of topics covered by this book provides a basic understanding of materials, devices, circuits and applications while...
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| Group Author: | ; |
|---|---|
| Published: |
Academic Press,
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| Publisher Address: | Cambridge, MA : |
| Publication Dates: | 2019. |
| Literature type: | Book |
| Language: | English |
| Series: |
Semiconductors and semimetals,
volume 102 |
| Subjects: | |
| Summary: |
"III-Nitride Electronic Devices, Volume 102, emphasizes two major technical areas advanced by this technology: radio frequency (RF) and power electronics applications. The range of topics covered by this book provides a basic understanding of materials, devices, circuits and applications while showing the future directions of this technology. Specific chapters cover Electronic properties of III-nitride materials and basics of III-nitride HEMT, Epitaxial growth of III-nitride electronic devices, III-nitride microwave power transistors, III-nitride millimeter wave transistors, III-nitride late |
| Carrier Form: | xii, 528 pages : illustrations (chiefly color) ; 24 cm. |
| Bibliography: | Includes bibliographical references and index. |
| ISBN: |
9780128175446 0128175443 |
| Index Number: | TK7871 |
| CLC: | TN304.2 |
| Call Number: | TN304.2/I256-2 |