Screen LibraryJoint Soviet-American Workshop on the Physics of Semiconductor Lasers：Leningrad, USSR 1991
Saved in:
| Corporate Authors: | |
|---|---|
| Group Author: | |
| Published: |
American Institute of Physics,
|
| Publisher Address: | New York |
| Publication Dates: | c1992. |
| Literature type: | Book |
| Language: | English |
| Series: |
AIP conference proceedings ; 240 |
| Subjects: | |
| Carrier Form: | viii, 183 p.: ill. ; 25 cm. |
| ISBN: | 0883189364 |
| Index Number: | TN248 |
| CLC: | TN248.4-532 |
| Call Number: | TN248.4-532/J747/1991 |
| Contents: |
Conference held May 19-June 3, 1991. Includes bibliographical references and index. Use of native oxides in Al[subscript x]Ga[subscript 1-x] As QWH lasers / R.D. Burnham ... [et al.] -- An experimental and theoretical study of the local temperature rise of mirror facets in InGaAsP/GaAs and AlGaAs/GaAs SCH SQW laser diodes / D.Z. Garbuzov ... [et al.] --High-power phase-locked arrays of antiguides / D. Botez -- Low threshold quantum well AlGaAs-heterolasers fabricated by low temperature liquid phase epitaxy / V.M. Andreev ... [et al.] -- Estimation of output power from semiconductor laser limited by optical nonlinearity / P.G. Eliseev and R.F. Nabiev -- High-power grating tuned semiconductor diode lasers and single- frequency diode-pumped Nd:YAG microcavity lasers / P. Gavrilovic̆ ... [et al.]. The influence of leakage on the characteristics of QW lasers / V.B. Khalfin ... [et al.] -- Nonlinear effects in picosendon high-power diode lasers / E.L. Portnoi, E.A. Avrutin, and A.V. Chelnokov -- High frequency modulation of quantum well heterostructure diode lasers by carrier heating in microwave electric field / S.A. Gurevich ... [et al.] -- Active Q-switiching of GaAlAs/GaAs lasers using free carrier effects in a modulation droped QW / Yu.G. Kozlov ... [et al.] -- Degenerate sixwave mixing in the active region of a diode laser and a problem of lateral distribution stability / A.P. Bogatov -- Blue semiconductor laser research at the University of Florida / P.S. Zory. Tunable diode lasers for 3 to 40 [mu]m infrared spectral region / A.P. Shotov -- InGaSbAs/GaAlSbAs heterostructures for mid-infrared injection lasers / B.N. Sverdlov -- Extremely smooth AlGaAs-GaAs quantum wells grown by metalorganic chemical vapor deposition / R.D. Dupuis, J.G. Neff, and C.J. Pinzone -- In situ patterning of impurity induced layer disordering and other applications of laser patterned desorption / J.E. Epler ... [et al.] -- Neutral impurity disordering of III-V quantum well structures for optoelectronics / J.H. Marsh ... [et al.] -- Reactive ion etching for fabrication of integrated optic and optoelectronic elements / F.N. Timofeev. Monolithic multiple wavelength tunable vertical cavity surface emitting laser array / C.J. Chang-Hasnain ... [et al.] -- Semiconductor microcavity effect on spontaneous emission / D.G. Deppe ... [et al.] --Frequency stabilized diode lasers / V.L. Velichansky. |