Cover is for reference only

Sic materials and devices. Vol 2 /

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Bibliographic Details
Corporate Authors: World Scientific Firm
Group Author: Shur, Michael; Rumyantsev, Sergey L; Levinshte in, M. E. Mikhail Efimovich
Published: World Scientific,
Publisher Address: Singapore ; Hackensack, N.J. :
Publication Dates: 2007.
Literature type: eBook
Language: English
Series: Selected topics in electronics and systems ; v. 43
Subjects:
Silicon carbide > Electric properties
Semiconductors
Electronic books
Online Access: http://www.worldscientific.com/worldscibooks/10.1142/6311#t=toc
Carrier Form: 1 online resource (vii,131pages) : illustrations.
Bibliography: Includes bibliographical references.
ISBN: 9812706852 (electronic bk.)
9789812706850 (electronic bk.)
CLC: TN304.1
Contents: Growth of sic substrates /
Deep level defects in silicon carbide /
Silicon carbide junction field effect transistors /
Sic BJTs /

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