Screen LibraryDielectrics for nanosystems：materials science, processing, reliability, and manufacturing : proceedings of the First International Symposium
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| Corporate Authors: | ; ; ; |
|---|---|
| Group Author: | |
| Published: |
Electrochemical Society,
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| Publisher Address: | Pennington, NJ |
| Publication Dates: | c2004. |
| Literature type: | Book |
| Language: | English |
| Series: |
Proceedings ; v. 2004-04 |
| Subjects: | |
| Carrier Form: | x, 490 p.: ill. ; 24 cm. |
| ISBN: | 1566774179 |
| Index Number: | TM21 |
| CLC: |
TM21-532 TN04-532 TB383-532 |
| Call Number: | TB383-532/I617-3/2004 |
| Contents: |
"Contains the proceedings of the First International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability, and Manufacturing, to be held on October 3-8, 2004, in Honolulu, Hawaii, as part of the 206th meeting of the Electrochemical Society (ECS). The Dielectric Science and Technology and Electronics Division of ECS and IEEE Electron Devices Society co-sponsor this symposium"--P. iii. Includes bibliographical references and index. [Pt.1] Nanoelectronics based nanosystems -- Nanoscale packaging and nano-bio electronic systems -- Process integration of highly stable 1.25 [micro]meter² 6T-SRAM cell with 45 nm gate length triple gate transistors -- Advanced process modules for scaled ULSIs -- SOI and low-k in high-volume manufacturing -- Gate dielectric impact for the 65 nm digital and mixed signal platform applications -- Ultra-high-speed and low-power SOI CMOS technology with body-tied hybrid trench isolation structure -- A 65 nm CMOS technology featuring hybrid-ULK/Copper interconnects -- Double-gate FinFET innovation |