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Next generation spin torque memories /

This book offers detailed insights into spin transfer torque (STT) based devices, circuits and memories. Starting with the basic concepts and device physics, it then addresses advanced STT applications and discusses the outlook for this cutting-edge technology. It also describes the architectures, p...

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Bibliographic Details
Main Authors: Kaushik, Brajesh Kumar (Author)
Group Author: Verma, Shivam (Writer on microelectronics); Kulkarni, Anant Aravind; Prajapati, Sanjay
Published: Springer,
Publisher Address: Singapore :
Publication Dates: [2017]
Literature type: Book
Language: English
Series: SpringerBriefs in applied sciences and technology,
Subjects:
Spintronics.
Nanotechnology.
Microelectronics.
Summary: This book offers detailed insights into spin transfer torque (STT) based devices, circuits and memories. Starting with the basic concepts and device physics, it then addresses advanced STT applications and discusses the outlook for this cutting-edge technology. It also describes the architectures, performance parameters, fabrication, and the prospects of STT based devices. Further, moving from the device to the system perspective it presents a non-volatile computing architecture composed of STT based magneto-resistive and all-spin logic devices and demonstrates that efficient STT based magneto-resistive and all-spin logic devices can turn the dream of instant on/off non-volatile computing into reality.
Carrier Form: xvii, 92 pages : illustrations, forms ; 24 cm.
Bibliography: Includes bibliographical references.
ISBN: 9789811027192 (paperback) :
9811027196 (paperback)
Index Number: TK7874
CLC: TN01
Call Number: TN01/K217
Contents: Preface; Contents; About the Authors; 1 Emerging Memory Technologies; 1.1 Introduction; 1.2 Non-volatile Memories; 1.2.1 Phase Change Memory; 1.2.2 Resistive RAM; 1.2.3 Ferroelectric RAM; 1.2.4 Magnetoresistive RAM; 1.3 Spin Torque Based Memories; 1.3.1 Spin Transfer Torque MRAM; 1.3.2 Spin Orbit Torque MRAM; 1.3.3 Domain Wall MRAM; 1.4 Comparison of Emerging Memory Technologies; 1.5 Chapter Summary; References; 2 Next Generation 3-D Spin Transfer Torque Magneto-resistive Random Access Memories; 2.1 Overview of Conventional STT MRAM: Architecture and Operation; 2.2 Cell Size in Memories

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