Screen LibraryGermanium-based technologies：from materials to devices
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| Corporate Authors: | |
|---|---|
| Group Author: | ; ; |
| Published: |
Elsevier,
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| Publisher Address: | Amsterdam London |
| Publication Dates: | 2007. |
| Literature type: | Book |
| Language: | English |
| Subjects: | |
| Carrier Form: | xxiv, 449 p.: ill. ; 25 cm. |
| ISBN: |
9780080449531 0080449530 |
| Index Number: | TQ134 |
| CLC: |
TQ134.3 O614.43 |
| Call Number: | O614.43/G373 |
| Contents: |
Includes bibliographical references and index. Introduction (C. Claeys, E. Simoen). -- Chapter 1. Germanium Materials (B. Depuyt <IT>et al</IT>.). -- Chapter 2. Grown-in Defects in Ge (J. Vanhellemont <IT>et al</IT>.). -- Chapter 3. Diffusion and Solubility of Dopants in Germanium (E. Simoen, C. Claeys). -- Chapter 4. Oxygen in Silicon (P. Clauws). -- Chapter 5. Metals in Germanium (E. Simoen, C. Claeys). -- Chapter 6. Ab-<IT>initio</IT> Modelling of Defects in Germanium (R. Jones, J. Coutinho). -- Chapter 7. Radiation Performance of Ge Technologies (V. Markevich <IT>et al</IT>.). -- Chapter 8. Electrical Performance of Devices (M. Houssa <IT>et al</IT>.). -- Chapter 9. Device Modeling (D. Esseni <IT>et al</IT>.). -- Chapter 10. Nanoscale Germanium MOS Dielectrics and Junctions (C. On Chui, K.C. Saraswat). -- Chapter 11. Advanced Germanium MOS Devices (C. On Chui, K.C. Saraswat). -- Chapter 12. Alternative Ge Applications. -- Chapter 13. Trends and Outlook (E. Simoen, C. Claeys). Germanium is a semiconductor material that formed the basis for the development of transistor technology. Although the breakthrough of planar technology and integrated circuits put silicon in the foreground, in recent years there has been a renewed interest in germanium, which has been triggered by its strong potential for deep submicron (sub 45 nm) technologies. Germanium-Based technologies: From Materials to Devices is the first book to provide a broad, in-depth coverage of the field, including recent advances in Ge-technology and the fundamentals in material science, device physics and semiconductor processing. The contributing authors are international experts with a world-wide recognition and involved in the leading research in the field. The book also covers applications and the use of Ge for optoelectronics, detectors and solar cells. An ideal reference work for students and scientists working in the field of physics of semiconductor devices and materials, as well as for engineers in research centres and industry. Both the newcomer and the expert should benefit from this unique book. * State-of-the-art information available for the first time as an all-in-source * Extensive reference list making it an indispensable reference book * Broad coverage from fundamental aspects up to industrial applications. |