The relationship between resistivity and dopant density for phosphorus- and boron-doped silicon /

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Bibliographic Details
Main Authors: Thurber, W. Robert
Group Author: Mattis, R.L; Liu, Y.M
Published:
Literature type: Book
Language: English
Series: Semiconductor measurement technology 64 (DE-603)226952517 (DE-600)274640-2s
Carrier Form: v, 47 p. ill. ; 27 cm.
CLC: TM934.16
Call Number: TM934.16/T536