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Dopants and defects in semiconductors /

"This revised edition continues to provide the most complete coverage of the fundamental knowledge of semiconductors, expanding on the latest technology and applications of semiconductors with a new chapter. In addition to inclusion of new chapter problems and worked examples, it delves into so...

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Bibliographic Details
Main Authors: McCluskey, Matthew D
Group Author: Haller, Eugene E
Published: CRC Press, Taylor & Francis Group,
Publisher Address: Boca Raton, FL :
Publication Dates: [2018]
Literature type: Book
Language: English
Edition: Second edition.
Subjects:
Semiconductor doping
Semiconductors > Defects
Summary: "This revised edition continues to provide the most complete coverage of the fundamental knowledge of semiconductors, expanding on the latest technology and applications of semiconductors with a new chapter. In addition to inclusion of new chapter problems and worked examples, it delves into solid-state lighting (LEDs and laser diodes). It treats dopants and defects as a unified subject, offering a solid foundation for experimental methods and the theory of defects in semiconductors"--
Carrier Form: xxii, 350 pages : illustrations ; 26 cm
Bibliography: Includes bibliographical references and index.
ISBN: 9781138035195
113803519X
Index Number: TK7871
CLC: TN305
Call Number: TN305/M128/2nd ed.
Contents: Semiconductor basics -- Defect classifications -- Interfaces and devices -- Crystal growth and doping -- Electronic properties -- Vibrational properties -- Optical properties -- Thermal properties -- Electrical measurements -- Optical spectroscopy -- Particle-beam methods -- Microscopy and structural characterization.

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