Author Results for Larrabee, R. D

Center for Electronics and Electrical Engineering U.S..,Electron Devices Division
Larrabee,R. D
Neutron Transmutation Doping Conference,National Bureau of Standards
United States.,National Bureau of Standards

1
A FORTRAN program for calculating the electrical parameters of extrinsic silicon /

Cover is for reference only
Main Authors: Larrabee, R. D
Corporate Authors: United States. National Bureau of Standards; Center for Electronics and Electrical Engineering U.S.. Electron Devices Division
Group Author: Thurber, W. Robert; Bullis, W. Murray, 1930
Published: U.S. Dept. of Commerce, National Bureau of Standards : For sale by the Supt. of Docs., U.S. G.P.O.,
Publication Dates: 1980.
Call Number: TP312/L333-1
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2
Neutron transmutation doping of semiconductor materials

Cover is for reference only
Corporate Authors: Neutron Transmutation Doping Conference (4th 1982 National Bureau of Standards
Group Author: Larrabee R. D
Published: Plenum Press,
Publication Dates: c1984.
Call Number: TN305-53/I61/1982/
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